Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: IGBTtransistorDescription: IGBT STMicroelectronics IGBT discrete components and modules, STMicroelectronics insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.283710+$11.8428100+$11.2507500+$10.85591000+$10.83622000+$10.75725000+$10.65857500+$10.579610000+$10.5401 -
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Category: IGBTtransistorDescription: STMICROELECTRONICS STGB10M65DF2 Single transistor, IGBT, 20 A, 1.55 V, 115 W, 650 V, TO-263, 3 pins97295+$5.896825+$5.460050+$5.1542100+$5.0232500+$4.93582500+$4.82665000+$4.783010000+$4.7174 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 60A 200000mW 3Pin(2+Tab) D2PAK T/R44495+$19.802350+$18.9560200+$18.4821500+$18.36361000+$18.24522500+$18.10985000+$18.02517500+$17.9405 -
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Category: IGBTtransistorDescription: IGBT STMicroelectronics IGBT discrete components and modules, STMicroelectronics insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.920010+$8.2932100+$7.8785500+$7.60211000+$7.58832000+$7.53305000+$7.46397500+$7.408610000+$7.3809 -
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Category: IGBTtransistorDescription: NChannel fixed support 20A - D2PAK/I2PAK internal clamp PowerMESH TM IGBT N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH TM IGBT23395+$30.251550+$28.9587200+$28.2348500+$28.05381000+$27.87282500+$27.66595000+$27.53667500+$27.4074 -
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Category: IGBTtransistorDescription: IGBT STMicroelectronics IGBT discrete components and modules, STMicroelectronics insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.398510+$6.0084100+$5.7080500+$5.50771000+$5.49772000+$5.45765000+$5.40767500+$5.367510000+$5.3475 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 15A 65000mW 3Pin(2+Tab) D2PAK T/R14841+$50.233510+$47.3513100+$45.2102250+$44.8808500+$44.55141000+$44.18082500+$43.85145000+$43.6455 -
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Category: IGBTtransistorDescription: STGB20NB41LZ Series N-Channel 442 V 20 A Internal Clamp PowerMESH IGBT-D2PAK507510+$6.5148100+$6.1891500+$5.97191000+$5.96102000+$5.91765000+$5.86337500+$5.819910000+$5.7982 -
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Category: IGBTtransistorDescription: IGBT Transistor Trench gate field stop IGBT, V series 600 V, 40 A very high speed66115+$5.003125+$4.632550+$4.3731100+$4.2619500+$4.18782500+$4.09515000+$4.058110000+$4.0025 -
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Category: IGBTtransistorDescription: IGBT STMicroelectronics IGBT discrete components and modules, STMicroelectronics insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.753010+$8.2404100+$7.8284500+$7.55371000+$7.54002000+$7.48505000+$7.41647500+$7.361410000+$7.3340 -
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Category: IGBTtransistorDescription: IGBT 600V 25A 80W D2PAK82945+$5.612025+$5.196350+$4.9053100+$4.7806500+$4.69742500+$4.59355000+$4.551910000+$4.4896 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 380V 40A 176000mW Automotive 3Pin(2+Tab) D2PAK T/R718910+$10.6476100+$10.1152500+$9.76031000+$9.74262000+$9.67165000+$9.58287500+$9.511910000+$9.4764 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 60A 260000mW 3Pin(2+Tab) D2PAK T/R56915+$4.669725+$4.323850+$4.0816100+$3.9779500+$3.90872500+$3.82225000+$3.787610000+$3.7357 -
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Category: IGBTtransistorDescription: NChannel fixed support 20A - D2PAK internal clamp PowerMESH TM IGBT N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH TM IGBT5252 -
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Category: IGBTtransistorDescription: 30 A - 600 V - Short circuit rugged IGBT 30 A -600 V - short circuit rugged IGBT15595+$23.747550+$22.7326200+$22.1643500+$22.02221000+$21.88022500+$21.71785000+$21.61637500+$21.5148 -
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Category: IGBTtransistorDescription: Igbt Npt 600V 31A 139W To263-3 - Skb15n60 E8151978910+$11.8596100+$11.2666500+$10.87131000+$10.85152000+$10.77255000+$10.67367500+$10.594610000+$10.5550 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 440V 15A Automotive 3Pin(2+Tab) D2PAK T/R54285+$6.563725+$6.077550+$5.7372100+$5.5913500+$5.49412500+$5.37255000+$5.323910000+$5.2510 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1.2kV 9.6A 3Pin(2+Tab) TO-26372245+$14.162950+$13.5576200+$13.2187500+$13.13391000+$13.04922500+$12.95245000+$12.89187500+$12.8313 -
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Category: IGBTtransistorDescription: Single transistor, IGBT, NPT, 6.2 A, 3.1 V, 62 W, 1.2 kV, TO-263, 3-pin185710+$7.6728100+$7.2892500+$7.03341000+$7.02062000+$6.96955000+$6.90557500+$6.854410000+$6.8288 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 27A 3Pin(2+Tab) TO-263257710+$9.0672100+$8.6138500+$8.31161000+$8.29652000+$8.23605000+$8.16057500+$8.100010000+$8.0698 -
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Category: IGBTtransistorDescription: IGBT Transistor Trench gate field stop IGBT, H series 600 V, 5 A high speed85065+$16.168250+$15.4773200+$15.0903500+$14.99361000+$14.89692500+$14.78635000+$14.71727500+$14.6481 -
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Category: IGBTtransistorDescription: The fast IGBT in NPT technology has a soft and fast recovery anti parallel diode EMCON Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode37315+$5.856325+$5.422550+$5.1188100+$4.9887500+$4.90192500+$4.79355000+$4.750110000+$4.6850 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 34A 3Pin(2+Tab) D2PAK26595+$14.731550+$14.1019200+$13.7494500+$13.66121000+$13.57312500+$13.47245000+$13.40947500+$13.3465 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 35A 3Pin(3+Tab) TO-220AB61305+$28.070650+$26.8710200+$26.1993500+$26.03131000+$25.86342500+$25.67145000+$25.55157500+$25.4315 -
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Category: IGBTtransistorDescription: Igbt 600V 60A 220W To26363735+$33.257350+$31.8360200+$31.0401500+$30.84111000+$30.64222500+$30.41485000+$30.27267500+$30.1305 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1000V 16A 54000mW 3Pin(2+Tab) TO-263AA41091+$99.040310+$94.7342100+$93.9591250+$93.3562500+$92.40891000+$91.97832500+$91.37545000+$90.8587 -
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Category: IGBTtransistorDescription: IXYS SEMICONDUCTOR IXGA30N60C3C1 IGBT Single Transistor, SIC, 60A, 3V, 220W, 600V, TO-263, 3Pins25405+$12.499150+$11.9650200+$11.6658500+$11.59111000+$11.51632500+$11.43085000+$11.37747500+$11.3240 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1200V 36A 180000mW 3Pin(2+Tab) D2PAK80001+$42.241310+$39.8176100+$38.0172250+$37.7402500+$37.46321000+$37.15162500+$36.87465000+$36.7014
